Magnetization-tuned topological quantum phase transition in <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:msub><mml:mi>MnBi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi>Te</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math> devices

Recently, the intrinsic magnetic topological insulator MnBi2Te4 has attracted enormous research interest due to great success in realizing exotic quantum states, such as anomalous Hall effect (QAHE), axion state, high-Chern-number and high-temperature Chern states. One key issue this field is effectively manipulate these states control phase transitions. Here, by systematic angle-dependent transport measurements, we reveal a magnetization-tuned transition from with gapped Dirac surface devices. Specifically, tilted away out-of-plane direction around 40-60 degrees, resistance deviates quantization value colossal, anisotropic magnetoresistance detected. The theoretical analyses based on modified Landauer-Buttiker formalism show that field-tilt-driven switching ferromagnetic state canted antiferromagnetic induces Our work provides an efficient means for modulating